Electronic Devices and Circuits

Unit I - Diodes
Semiconductor Materials and Properties, The p-n Junction, The ideal diode, Terminal characteristics of junction diodes, Modeling diode forward characteristics, Reverse breakdown region– Zener diode, Rectifier circuits, Limiting and clamping circuits, Physical operation of diodes, Special diodes.
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Unit II - The Bipolar Junction Transistor
Device structure and physical operation, Current– voltage characteristics, The BJT as an amplifier and a switch, DC Analysis of BJT Circuits, Biasing BJT Amplifier Circuits.

Unit III - BJT Amplifiers
Small Signal operations and models, Transconductance, Input resistances, Voltage gain, Hybrid-model,T-model, Small Signal equivalent circuit, Early effect, Single stage BJT amplifiers CE,CB,CC,Comparison.

Unit IV - The MOS Field Effect Transistors
Device structure and physical operation, Current– voltage characteristics, The MOSFET as an amplifier and a switch, DC Analysis of  MOSFET Circuits, Biasing MOSFET Amplifier Circuits.
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Unit V - MOSFET Amplifiers
Small Signal operations and models, Transconductance gm, T equivalent circuit model, Body effect,  Single stage MOS amplifiers Amplifier Configuration, Common Source, Source Follower, Common Gate Configuration,: Summary and Comparison of the three Basic Amplifier Configurations, Summary and comparison.
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TextBooks
1.Adel S.Sedra, Kenneth C.Smith & Arun N. Chandorkar, Microelectronic Circuits,: Theory
and Applications,5/e,OUP, Chennai,2009.

2.D.A.Neamen,„Electronic Circuit Analysis and Design‟,3/e,Tata McGraw-Hill,NewDelhi,
2007